X-FAB Silicon Foundries and Exagan, a start-up that specializes in gallium-nitride (GaN) semiconductor technology, demonstrated the ability to mass-production highly efficient, high-voltage power devices on 200-mm GaN-on-silicon wafers. The fabrication uses X-FAB’s standard CMOS production facility in Dresden, Germany. The production accomplishment resulted from a joint development agreement launched in 2015, to enable cost and performance advantages that smaller wafers could not achieve.
While using standard fabrication equipment and process recipes, Exagan and X-FAB say they successfully resolved many of the challenges related to material stress, defects, and process integration. Exigan produced the GaN epi-wafers at its 200-mm manufacturing facility in Grenoble, France. According to Exigan, these epi wafers meet the physical and electrical specifications for producing its 650-volt G-FET™ devices, and they also meet the tight requirements for compatibility with standard CMOS manufacturing lines.
G-Stack Technology forms Stack of GaN and Strain Management Layers
Exagan contends that its G-Stack™ technology enables GaN-on-silicon devices to be fabricated more economically on 200-mm substrates. The G-Stack technology forms a unique stack of GaN and strain-management layers. This stack relieves the stress between GaN and silicon layers. The resulting devices can operate at high temperatures, and they exhibit high breakdown voltage and low vertical leakage.
Then, X-FAB used its wafer fab processing to mass produce Exagan’s G-FET devices.
Frédéric Dupont, president and CEO of Exagan commented, “It’s perfect timing to establish GaN technology and products on the most competitive 200-mm platform just as GaN power products are getting broad traction in IT server, consumer electronics, and automotive markets.”
Rudi De Winter, CEO of X-FAB said, “Through this productive partnership, X-FAB is leveraging its resources and expertise to bring Exagan’s technology into manufacturing and provide the power conversion market with a reliable supply chain.”
Exagan will showcase its GaN technology and G-FET transistors in at the PCIM Europe trade show, May 16-18 in Nuremberg, Germany.