Wolfspeed Launches 900V SiC MOSFET

Wolfspeed, a Cree Company, has introduced a silicon carbide (SiC) 900V, 10mΩ MOSFET rated for 196 A of continuous drain current at a case temperature of 25˚C. According to Cree, the MOSFET can reduce of EV drive-train inverter losses by up to 78 percent based on EPA’s combined city/highway mileage standards. Cree notes that this efficiency improvement gives designers new options because it enables increased range and reduces battery usage.

Recently Wolfspeed in collaboration with the U.S. Department of Energy supplied Ford Motor Company with a full-SiC, 400A power module that they designed to use the 900V, 10mΩ chip. The Wolfspeed-designed module contains four MOSFETs connected in parallel to achieved a 2.5mΩ Rds(on). Since then, Wolfspeed engineers have shown that they can combine two of these modules to make an 800A, 1.25mΩ Rds(on) module.

The company rated and commercially qualified the new chip for a maximum operating temperature of 175˚C for high-reliability in harsh environments including vehicle drive-trains.

Device Information

The new 900V, 10mΩ MOSFET, which is listed as part number CPM3-0900-0010A, can be purchased in bare die form from SemiDice. In the coming weeks, the company plans to release the associated discrete device in a 4L-TO247 package (C3M0010090K). The package features a Kelvin-source connection that allows maximization of the benefits from SiC’s superior efficiency and speed.

“With the commercial release of the 900V 10mΩ device, electric vehicles can now reap the benefits of SiC in all aspects of their power conversion,” said John Palmour, CTO of Wolfspeed. “With the continued expansion of our Gen3 MOSFET portfolio in new package options, our devices can now support significant efficiency improvements in onboard chargers, offboard chargers, and now EV drive trains.”