Wolfspeed Introduces New Line of GaN HEMT RF Power Devices

Wolfspeed, a Cree Company and a supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), has launched a new line of 28V GaN HEMT RF power devices. These new devices allow higher frequency operation of 6GHz to 8GHz with increased efficiency and higher gain. Wolfspeed also says that these new devices provide best-in-class reliability. The line of HEMTs reportedly lets RF design engineers build more efficient broadband power amplifiers for radar, as well as commercial and military wireless communications applications.

Wolfspeed developed the new 28V GaN HEMT devices using its proven 0.25µm GaN-on-SiC process. The HEMTs feature the same package footprint as the previous generation of 0.4µm devices, allowing drop-in replacements for the earlier devices in existing designs.

New RF Power Devices Operate at 33% Higher Frequency than Previous Generation

Available as both bare die (CG2H800 Series) and packaged devices (CG2H400 Series), the new GaN HEMTs deliver 33% higher frequency operation of 6GHz to 8GHz. The RF power devices feature an additional 1.5-2.0dB of gain, as well as a 5-10% boost in operating efficiency compared to the company’s previous generation devices.

“By moving to our proven 0.25µm process for these next-generation devices, we are able to deliver significant performance advantages to a wide range of customers while maintaining the superior reliability these types of applications require,” said Jim Milligan, RF and microwave director, Wolfspeed. “Offering these new devices in the same packages as our previous generation parts enables RF design engineers to quickly and easily boost the performance of their RF amplifiers.”

Compared to silicon (Si) and gallium arsenide (GaAs) RF power devices, Wolfspeed’s GaN-on-SiC RF power devices achieve higher breakdown voltage, and offer higher temperature operation, higher efficiency, higher thermal conductivity, higher power density, and wider bandwidths, all of which are essential for creating lighter, smaller, and more efficient microwave and RF products.

According to Wolfspeed, their higher bandwidth capability and higher efficiency of up to 70% at PSAT makes these devices perfect for an broad range of RF power amplifier applications, such as those for commercial RF applications in the industrial, medical, and scientific (ISM) band, as well as those for military communications systems, radar equipment (UHF, X-, L-, S-, and C-band), electronic warfare (EW) and electronic counter-measure (ECM) systems.