WIN Semiconductors Corp of Taiwan, a pure-play compound semiconductor foundry, reports that its PIH1-10 advanced GaAs platform enables fully integrated single-chip solutions for 5G front-end modules. The company’s PIH1-10 process integrates monolithic PIN diodes, which provide power switching through 50GHz, into a 100GHz ft pseudomorphic HEMT platform. Win Semiconductors says that this technology delivers excellent transmit power performance and a lower receiver noise figure, both required for 5G systems.
Win Semiconductors PIH1-10 Platform Offers Multiple Pathways to Increase Integration
The company notes that this versatile technology offers multiple pathways to add on-chip functionality and increase integration. The PIH1-10 platform also provides linear Schottky diodes for detectors or mixers, as well as enhancement and depletion transistors optimized for bias controls and logic functionality. According to Win, when combined with RF isolated through-wafer-channels, this humidity resistant technology can enable a wafer level package for compact chip integration in MIMO functions where available board space is limited.
David Danzilio, Senior Vice President of WIN Semiconductors Corp., commented, “Compound semiconductors, and particularly GaAs, remain the technology of choice for demanding amplifier functions from 500MHz through 100GHz and above. This advantage comes from higher gain, linearity, and power added efficiency provided by GaAs devices as compared to RF CMOS or SiGe. This performance advantage will be critical in the 28-40GHz bands envisioned for 5G where gain and efficiency at 6-10dB back-off will determine system-level performance.”
Danzilio concluded, “WIN’s GaAs pseudomorphic HEMT is the foundation for many of today’s high-performance amplifiers operating in the 20GHz to 100GHz range, and incorporating low-loss PIN switch functionality enables our customers to field unique single-chip 5G solutions without sacrificing performance.”