Win Semiconductor Expands GaN Processes to Include 0.45m-gate Technology for 5G

WIN Semiconductors Corp, a pure-play compound semiconductor foundry, expanded its gallium nitride (GaN) process capabilities to include a 0.45m-gate technology supporting current and future 5G applications. The firm says its NP45-11 GaN-on-SiC process lets customers design hybrid Doherty power amplifiers for 5G applications such as massive MIMO (multiple-input and multiple-output) wireless antenna systems.

Similar to macro-cell applications, MIMO base stations frequently couple Doherty power amplifiers with linearization techniques to satisfy the exacting linearity and efficiency specifications of today’s wireless infrastructure. Notably, GaN devices outperform the incumbent LDMOS technology, delivering superior efficiency, as well as increasing instantaneous bandwidth and linearity, especially in the higher frequency bands used in 5G radio access networks.

Win Semi’s NP45-11 Ideal for 5G applications including Macro-cell Transmitters and MIMO Access Points

Ideal for use in sub-6 GHz 5G applications such as macro-cell transmitters and MIMO access points, the NP45-11 technology supports RF power applications for frequencies ranging from 100 MHz through 6GHz.

The company says that the environmentally rugged discrete transistor process features moisture protection and meets the JEDEC JESD22-A110 biased HAST qualification at 55 volts. Combined with WIN Semiconductors’ rugged high-voltage passive technology, IP3M-01, the NP45-11 technology enables the creation of hybrid power amplifiers in a low-cost plastic package.

The GaN NP45-11 technology is fabricated on 100mm silicon carbide substrates and operates at a drain bias of 50 volts. In the 2.7GHz band, this technology delivers saturated output power of 7 watts/mm with 18 dB linear gain, and also provides more than 65% power added efficiency without harmonic tuning.

“The tradeoff between output power and linearized efficiency is significant because of the high peak-to-average power ratio employed in today’s wireless modulation schemes. This tradeoff becomes more difficult in 5G applications due to greater instantaneous bandwidth requirements and higher operating frequency,” commented David Danzilio, Senior Vice President of WIN Semiconductors Corp.

NP45-11 sample kits are now available through WIN’s regional sales managers.