UnitedSiC Launches 650 V and 1200 V Silicon Carbide FETs

UnitedSiC of Princeton, New Jersey USA, announced the launch of its UF3C FAST series of 650 V and 1200 V silicon carbide FETs in a standard TO-247-3L package.

The FAST Series boasts increased switching speeds and higher efficiency levels compared to the company’s existing UJC3 Series.

The company based this new UF3C series on UnitedSiC’s proprietary cascode configuration.

According to UnitedSiC, the new SiC FET series can serve as a ‘drop-in’ replacement solution for most TO-247-3L IGBT, Si-MOSFET and SiC-MOSFET components.

Therefore, system upgrades for enhanced performance and efficiency can be implemented without requiring changes to the existing gate drive circuits. The company says that the series also can reduce turn-on losses based on a 50 percent reduction in Qrr. For use with high current, a small, low-cost RC snubber is needed, which also simplifies EMI design.

Applications for using the UF3C FAST series include the full range of hard switched circuits. Active rectifiers and totem-pole PFC stages, frequently used in EV charging, telecom rectifiers and server supplies, are among these hard switched circuit applications.

FETs Used UnitedSiC Gen-3 SiC Transistor Technology

Constructed based on UnitedSiC’s Gen-3 SiC transistor technology, the UnitedSiC says that the UF3C FAST series combines a faster SiC JFET with a custom-designed Si-MOSFET to deliver the perfect combination of normally-OFF operation, a high-performance body diode, and an easy gate drive of the MOSFET. The SiC cascode FETs support standard 12 V gate drives, and have assured avalanche ratings that are 100 percent production-tested.

The range includes the part numbers: UF3C120040K3S (1200 V / 35 mΩ), UF3C065030K3S (650 V / 30 mΩ) and UF3C065040K3S (650 V / 42 mΩ).

Data sheets and a SiC FET user guide are available at https://unitedsic.com/cascodes/. These datasheets and user guides feature recommended RC snubber values that UnitedSIC tested for optimal performance.