A team from Ulsan National Institute of Science and Technology (UNIST) has developed a novel method for fabricating an oxide semiconductor that is just one atom thick.
The development may open up new possibilities for creating flexible, thin, and electronic devices, such as ultra-small sensors. Professor Zonghoon Lee of Materials Science and Engineering at UNIS lead the team that created the new ultra-thin oxide semiconductors.
The researchers employed atomic layer deposition to grow the single-atom-thick ZnO layer directly on graphene. According to the team, the ZnO film is the thinnest ever heteroepitaxial layer of semiconducting oxide on monolayer graphene.
“Flexible, high-performance devices are indispensable for conventional wearable electronics, which have been attracting attention recently,” said Professor Lee. “With this new material, we can achieve truly high-performance flexible devices.”
The team detailed the development in an article in Nano Letters.
Hyo-Ki Hong et al., “Atomic Scale Study on Growth and Heteroepitaxy of ZnO Monolayer on Graphene,” Nano Letters, 2017, 17 (1), pp 120–127. DOI: 10.1021/acs.nanolett.6b03621.