The United States government approved Raytheon to export of its Gallium Nitride- (GaN) based Active Electronically Scanned Array (AESA) Patriot sensor to Patriot Air and Missile Defense System partner nations.
“GaN-based AESA technology can bring customers of the combat-proven Patriot optimized 360-degree coverage while setting the stage for future capability improvements,” said Ralph Acaba, vice president of Integrated Air and Missile Defense at Raytheon’s Integrated Defense Systems business. “GaN-based AESA technology improves Patriot’s already high-reliability rate and significantly reduces the radar’s annual operation and maintenance costs beyond what has already been achieved with other recent Patriot radar improvements.”
According to Raytheon, Patriot will incorporate the company’s proven and mature GaN-based AESA technology. The design of the U.S. Navy’s new Air and Missile Defense Radar and a number of U.S. Air Force systems will also employ the technology.
In Feb 2014, Raytheon demonstrated a successful GaN-based AESA prototype Patriot array using GaN produced at Raytheon’s Department of Defense certified Manufacturing Readiness Level 8 foundry. Raytheon’s GaN foundry was the first to receive DoD MRL 8 certification which successfully demonstrated and proved its manufacturing and quality processes. The certification indicates that Raytheon’s GaN is ready to enter production.