news

FLOSFIA Demos First Ever Gallium Oxide Normally-off MOSFET

FLOSFIA of Kyoto, Japan reports that it successfully demonstrated α-Ga2O3 normally-off metal organic semiconductor field effect transister (MOSFET). This world-first α-Ga2O3 normally-off MOSFET is comprised of an N+ source/drain layer, a p-type well layer, a gate insulator, and electrodes. The gate threshold voltage, which was extrapolated from I-V curve, was 7.9V. …

Read More

Riber Opens Subsidiary in Shanghai, China

Riber, a maker of MBE systems headquartered in Bezons, France, announced the opening of its 100% owned subsidiary (WOFE – Wholly Foreign Owned Enterprise), Riber Semiconductor Technology Shanghai. The subsidiary opening comes after the company’s have sucessfully operated in China for more than 30 years. According to Riber, its new …

Read More

SDK Again Increases SiC Wafer Capacity

Showa Denko Kabushiki Kaisha (SDK) of Tokyo reported that the company intends to expand is production capacity of SiC sheets from 5000 wafers per month now to 7000 in September this year, and the company plans to attain production 9000 wafers in February 2019. After previously raising production capacity both …

Read More

Graphene Engineering Innovation Centre (GEIC) Signs First Partners

The University of Manchester’s recently finished £60m Graphene Engineering Innovation Centre (GEIC) has agreed to establish the first in a series of industrial partnerships. The center intends to use the industrial partnerships to accelerate the commercialization of graphene in Manchester. First Graphene Ltd, Haydale Graphene Industries, and Versarien PLC have …

Read More