Feature

ALLOS and Veeco Complete Latest Phase of GaN-on-Silicon Micro LED Manufacturing Effort

ALLOS Semiconductors GmbH and Veeco Instruments Inc. reported the completion of another phase of their effort to develop GaN-on-Silicon epiwafer technology for microLED production. In the most recent phase of the work, the companies demonstrated the reproducibility of ALLOS’ 200 mm GaN-on-Si epiwafer technology with Veeco’s Propel® MOCVD reactor to produce …

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Nitride Semiconductors Opens Micro LED Subsidiary

Japanese firm, Nitride Semiconductors reports that on Nov. 1, 2018, the company established and opened a  100% owned subsidiary, Micro Nitride Co., Ltd. The new company, which is headquartered in Tokushima, develops, produces, and sells micro UV LED chips for micro LED displays. The company points out that in recent …

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GaN Systems to Present at IEEE Energy Conversion Congress and Exposition (ECCE) 2018

Canadian power semiconductor firm, GaN Systems, announced its participation at the 10th annual IEEE Energy Conversion Congress and Exposition (ECCE) 2018. At poster sessions of the IEEE Energy Conversion Congress and Exposition (ECCE) 2018, experts at GaN Systems will present to-date developments, solutions, and discussions about GaN power electronics. The …

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Custom MMIC Launches Line of GaAs Digital Step Attenuators (DSA)

Custom MMIC of Chelmsford, Massachusetts, a developer of monolithic microwave integrated circuits (MMICs), has introduced a new product line of GaAs Digital Step Attenuators (DSA). The company intends the DSA family to facilitate the design of high dynamic range receivers and instrumentation. Notably, these applications often must achieve gain control of …

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CST Global Increases Laser Chip Inspection Capacity

CST Global, a wholly-owned subsidiary of Sivers IMA Holdings AB, reported that the company successfully installed and commissioned an Opto Systems VVSP4000, automatic pick and place, visual inspection system at its fabrication facility in Blantyre, Glasgow, UK. The machine performs visual inspections of both the top side and facets of …

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Max Planck Institute Purchases Veeco GEN10 Automated MBE Cluster System for Research into Oxide-Nitride Layer Structures

Plainview, New York USA-based Veeco Instruments Inc. reported that the Max Planck Institute of Microstructure Physics, Halle (Saale), Germany (MPI-MSP) ordered the dual chamber GEN10™ automated molecular beam epitaxy (MBE) cluster system. The Max Planck Institute cited reliability and the ability to customize the system as critical factors in its …

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SUNY Poly Researcher Awarded $2,078,000 ARL Grant to Develop Ultra-High Voltage SiC Devices

SUNY Polytechnic Institute in Albany, New York USA, reported that the U.S. Army Research Laboratory (ARL) selected Associate Professor of Nanoengineering Dr. Woongje Sung to receive $2,078,000 in total to make advances in the project of Manufacturing of Ultra-high-voltage Silicon Carbide devices known as “MUSiC.” Dr. Sung will lead a …

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PASSION Project Attempts Using VCSELs for Ultra-High-Speed, Long-Distance Data Transmission

Vertical cavity surface emitting lasers or VCSELs are laser diodes that are inexpensive to make and more energy efficient than standard lasers. Now, a group of EU-funded researchers intends to use VCSELs to deliver ultra-high-speed broadband across long distances. This effort has the potential to end the data bottlenecks experienced …

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