TriQuint Semiconductor, Inc. of Hillsboro, Oregon USA, announced the
production of gallium nitride (GaN) high electron mobility transistors (HEMTs)
using GaN-on-diamond wafers. The GaN-on-diamond wafers substantially reduce
semiconductor temperatures while maintaining high RF performance. TriQuint
successfully transfered a semiconductor epitaxial overlay onto a synthetic
diamond substrate. This provides high thermal conductivity and low thermal
boundary resistance, while preserving critical GaN crystalline layers.
TriQuint demonstrated its new GaN-on-diamond, high electron mobility
transistors (HEMT) in conjunction with partners at the University of Bristol,
Group4 Labs and Lockheed Martin under the Defense Advanced Research Projects
Agency’s (DARPA) Near Junction Thermal Transport (NJTT) program. TriQuint
claims that its new technology enables RF amplifiers that are up to three times
smaller or up to three times the power of today’s GaN solutions.
NJTT focuses on device thermal resistance ‘near the junction’ of the
transistor. Thermal resistance inside device structures can be responsible for
more than 50% of normal operational temperature increases. TriQuint research
has shown that GaN RF devices can operate at a much higher power density and in
smaller sizes, through its highly effective thermal management techniques.
Operating temperature largely determines high performance semiconductor
reliability. It’s especially critical for GaN devices that are capable of
very high power densities.
James L. Klein, vice president and general manager for infrastructure and
defense products commented, “By increasing the thermal conductivity
and reducing device temperature, we are enabling new generations of GaN devices
that may be much smaller than today’s products. ”