Transphorm Inc. of Goleta, California reports that it has obtained a sole worldwide license to Furukawa Electric Co., Ltd.’s Gallium Nitride (GaN) power device portfolio. The portfolio includes about 40 U.S. issued patents and 110 Japanese issued patents. Under the terms of the agreement, Transphorm has certain rights to sublicense these patents. The licensed family of patents relates to GaN power device manufacturing and materials and circuits, including key patents for GaN-on-silicon epitaxial growth technology.
As part of the agreement, Furukawa Electric made an equity investment in Transphorm. The deal raises Transphorm’s total GaN IP portfolio to over 300 U.S. patents and patent applications in addition to more than 650 world-wide patents and patent applications, including a combination of internally developed, licensed and acquired patents.
Transphorm previously introduced the first 600 Volt GaN HEMT products after successfully passing JEDEC qualification. Most recently, high voltage accelerated testing projects an incredible lifetime of 100 million hours for the products.
“As we sought to unlock the value of this portfolio, as well as to secure a supply of GaN products for our own applications, Transphorm was an ideal choice. Additionally, Furukawa Electric is also willing to have further technical collaboration with Transphorm, as a strategic partner, beyond this license and investment,” Takahide Kimura, corporate senior VP, new business development, Furukawa Electric, said.