Tokuyama Corporation successfully starts up AIXTRON MOCVD System for development and production of UV LEDs

Aachen, Germany — AIXTRON AG is pleased to announce the successful start-up of an AIXTRON 200/4 RF-S epitaxy reactor at Tokuyama, Japan. The system is used for the development and production of AlGaN based ultra-violet light emitting diodes (UV-LEDs) and is installed at the Tokuyama R&D center in Tsukuba, Japan.

UV-LEDs present significant process challenges but the AIX 200/4 RF-S reactor is capable to provide highest quality GaN and AlGaN layers due to its excellent process stability and 1400