Sumitomo Electric Industries, Ltd. has begun mass producing a high-quality SiC epitaxial wafer, “EpiEra™”. The company claims that their new SiC epitaxial wafers feature a wafer area which is more than 99% defect free of defects. Sumitomo Electric reports that the company has successfully developed a high-quality SiC epitaxial wafer, which they call “EpiEra™”.
Sumitomo contends that EpiEra™ epitaxial wafer has achieved an industry-leading 99% defect-free area (DFA). The company says it was able to virtually eliminate surface defects and Basal Plane Dislocations (BPD) for improved quality, stability, and reliability. Sumitomo Electric showcased this new product at International Conference on Silicon Carbide and Related Materials (ICSCRM) 2017 in Washington D.C., on September 17-22, 2017.
SiC Epitaxial Wafer Good for Power Electronics
Such wafers are used in power electronics devices because of their ability withstand high-power operation under extreme temperatures.