Soitec of Bernin, France, and SunEdison, Inc. of St. Peters Mousouri, announced that they have entered into a patent cross-license agreement related to silicon-on-insulator (SOI) wafer products. The agreement ends all outstanding legal disputes between the companies and provides access to a portfolio of patents from both companies. It covers the manufacturing of existing engineered unpatterned handle-substrates such as partially depleted SOI (PD-SOI), fully depleted SOI (FD-SOI) and radio-frequency SOI (RF-SOI) as well as advanced FinFETs, and covers components for applications beyond the 10 nm node. Soitec and SunEdison have also granted each other the right to use their respective wholly owned patents for research and development of products in which the device layer is made of a semiconductor material other than plain, non-strained silicon, such as a silicon-germanium compound, germanium or III-V materials.
“This agreement represents a key milestone in the continuing development of a strong supply chain in the SOI ecosystem,” said Christophe Maleville, senior vice president of Digital Electronics Division of Soitec. “It also demonstrates the key role of SOI substrate technology for the current and future CMOS device roadmap.”
Horacio Mendez, vice president of Semiconductor Advanced Solutions, SunEdison stated, “This cooperation adds to SunEdison’s current SOI product capability and enhances the ability of both companies to provide more compelling SOI solutions to our customers.”