Soitec, based in Bernin, France, and Intelligent Epitaxy Technology, Inc. of Taiwan have signed a collaborative agreement to better serve the GaAs market. Gallium arsenide (GaAs) is a III-V semiconductor used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared LEDs, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors including InGaAs and GaInNAs.
The goal of the partnership is to provide a reliable second source, while also extending the leadership position of both companies in the GaAs market. Under the terms of the agreement, Soitec granted granted IntelliEpi a technology license granted, which may be extended to address future business opportunities in the GaAs market, including equipment transfer.
“We are delighted to announce the license of our technology leading to a second source for our products for our key GaAs customers,” said Bernard Aspar, senior vice president and Soitec’s Communication & Power Business Unit general manager.
“This collaborative agreement will reinforce our GaAs technology and product know-how while, at the same time, offering Soitec’s customers supply-chain security,” said Yung-Chung Kao, IntelliEPI president and CEO.