| IQE and II-VI Inc. Launch 150mm GaN HEMT Epi Wafers on SiC Substrates May 13, 2013...IQE of Cardiff, UK announced the launch of gallium nitride based, high
electron mobility transistor (GaN HEMT) epitaxial wafers on 150mm diameter
semi-insulating silicon carbide (SiC) substrates. The SiC substrates are
supplied by the WBG Materials subsidiary of II-VI Inc., a provider of
optoelectronic components.
IQE says that GaN power amplifiers offer superior power capability,
efficiency, bandwidth and linearity compared with silicon (Si) or gallium
arsenide (GaAs)-based... Researchers Use Strain Engineering to Improve Green LED Light OutputMay 8, 2013...Researchers from the Chinese Academy of Sciences’ Institute of
Semiconductors, Beijing, and University of Hong Kong have used strain
engineering to improve the light output of Green LEDs. The researchers improved
the light output of a 530nm green LED operating at 150 mA by 28.9 percent [Hongjian Li et al, Appl. Phys.
Express, vol6, p052102, 2013].
The researchers note that green-emitting nitride semiconductor LED
structures tend... TriQuint Produces GaN HEMTs Using GaN-on-Diamond WafersMay 6, 2013...TriQuint Semiconductor, Inc. of Hillsboro, Oregon USA, announced the
production of gallium nitride (GaN) high electron mobility transistors (HEMTs)
using GaN-on-diamond wafers. The GaN-on-diamond wafers substantially reduce
semiconductor temperatures while maintaining high RF performance. TriQuint
successfully transfered a semiconductor epitaxial overlay onto a synthetic
diamond substrate. This provides high thermal conductivity and low thermal
boundary resistance, while preserving critical GaN crystalline layers.
TriQuint demonstrated its new GaN-on-diamond,... CrystAl-N Launches 2-Inch Bulk AlNMay 6, 2013...CrystAl-N, a German maker of AlN crystals is shifting its production from
1-inch to 2-inch AlN and accepting pre-orders of the new material. CrystAl-N is accepting pre-orders now. The company was founded in 2010 as a spin-off of Friedrich-Alexander-University Erlangen-Nuremberg. The company
says that its AlN substrates will boost the efficiency of deep UV LEDs, lasers
and high-power, high-frequency devices as soon as... IQE Launches New, Dedicated Infrared Products DivisionMay 6, 2013...IQE of Cardiff, UK, announced the launch of a new division, ‘IQE
Infrared’. IQE Infrared will provide its customers with a complete
‘one stop shop’ for infrared substrate and epitaxial wafer
materials covering short to very long wavelength (SWIR to VLWIR) regimes. The
new division launch is part of IQE’s overall rebranding to enable the
Group to enhance its customers' experiences in its key markets.
IQE... Research into High-thermal-conductivity Substrates for GaN Electronics Gets UK FundingApril 29, 2013...Researchers from the University of Bath and the University of Bristol will
receive funding totaling more than £823,800 from UK’s Engineering and
Physical Sciences Research Council (EPSRC) over the next three years years. The
project is to develop highly thermally conductive substrates for GaN
electronics.
A £430,597 grant (EPSRC reference EP/K024337/1) was awarded to the
University of Bath’s Department of Electronic and Electrical Engineering
with principal investigator... Hitachi Cable Develops Technology for Mass Production of GaN TemplatesApril 29, 2013...Hitachi Cable has developed a new mass-production technology for
GaN-templates. The process grows high-quality GaN single-crystal thin film on a
sapphire substrate. The company plans to start selling these templates. The
company says that using the templates as a base substrate for an epitaxial
wafer for white LEDs allows drastic improvement in productivity of white LED
epiwafers and the LED properties
MOPVE can reportedly grow a... Market for GaN and SiC Power Semiconductors to Rise By Factor of 18 from 2012 to 2022, According to IMS ResearchApril 29, 2013...IMS Research predicts that the market for Silicon Carbide (SiC) and Gallium
Nitride (GaN) power semiconductors will grow to 18 times its current size
during the next ten years fueled by demand from power supplies, photovoltaic
(PV) inverters and industrial motor drives. Worldwide revenue from sales of SiC
and GaN power semiconductors is projected to rise...
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... IQE of Cardiff, UK announced the launch of gallium nitride based, high electron mobility transistor (GaN HEMT) epitaxial wafers on 150mm diameter semi-insulating silicon carbide (SiC) substrates. The SiC substrates are supplied by the WBG Materials subsidiary of II-VI Inc., a provider of optoelectronic components. IQE says that GaN power amplifiers offer superior power capability, efficiency, bandwidth and linearity... 
