| Anidigics PAs with InGaP-Plus Technology Enable Samsung’s New Galaxy S4 May 20, 2013...Warren, New Jersey USA-based Anadigics, Inc. announced that the
company’s AWL9581 802.11ac front-end IC (FEIC), AWT6651
ProEficient™ power amplifier (PA), AWT6624 HELP4™ PA, and AWC6323
HELP3E™ dual-band PA enable wireless connectivity in the Galaxy S 4 by
Samsung Electronics. This feature-rich smartphone offers a 5-inch full HD Super
AMOLED display, 1.9 GHz quad-core processor, 13 megapixel camera, and Android®
4.2.2 Jelly Bean operating system. The new... Mellanox Agrees to Acquire KoturaMay 20, 2013...Mellanox® Technologies, Ltd. of Sunnyvale, California USA, a supplier of
interconnect solutions for servers and storage systems, has agreed to acquire
Kotura, Inc., a developer of silicon photonics for high-speed networking
applications. Mellanox and Kotura have signed a definitive agreement under
which Mellanox will acquire the privately owned Kotura at a total cash purchase
price of approximately $82 million subject to certain adjustments. The terms... Skyworks New Family of Antenna Switches Supports Carrier AggregationMay 13, 2013...Skyworks Solutions, Inc. of Woburn, Massachusetts USA has introduced RF
switching technology that is enabling early adopters to implement carrier
aggregation solutions. Carrier aggregation allows mobile service providers to
use utilizing two or more bands simultaneously instead of the single band
method used currently to combine spectrum and increase data rate throughput for
an enriched data experience regardless of location. As an increasing amount of
data... Avago Technologies to Acquire CyOpticsApril 15, 2013...Avago Technologies of San Jose, California USA, a supplier of analog interface components for communications, announced the execution of a definitive agreement to acquire CyOptics Inc. CyOptics produces indium phosphide (InP) optical chip and component technologies for the data communications and telecommunications markets.
Aggregate compensation for acquisition of CyOptics, which had revenues of $210 million in 2012, will be about US$400... OTEGLOBE Doubles International TransBalkan Network Capacity Employing the Infinera DTN-X PlatformApril 8, 2013...Infinera of Sunnyvale, California, a provider of digital optical networks,
reportedly helped complete the upgrade of OTEGLOBE’s international
TransBalkan Network (TBN). OTEGLOBE, the leading international
telecommunications provider in Greece and the Balkans, deployed 500 Gigabit
per second (Gb/s) super channels with the Infinera DTN-X platform in OTEGLOBE's
TransBalkan network which stretches more than 8,000 km from Greece to Germany. It is designed to offer multi-Terabits... Mitsubishi Electric to Launch 40Gbps Driver-In EML-TOSA Compliant with Miniature Device Multi-Source AgreementMarch 18, 2013...Mitsubishi Electric Corporation of Tokyo, Japan announced today that it will
begin shipping a compact 40Gbps Electro-absorption Modulator with Laser
diode-Transmitter Optical Sub Assembly (EML-TOSA) for optical transmissions on
June 1. As of March 1, the FU-695REA became the world's first EML-TOSA to
comply with the 40Gbps Miniature Device Multi-Source Agreement (XLMD2-MSA)
specification, which was made effective March 13. Mitsubishi Electric, LAPIS
Semiconductor Co., Ltd., Oclaro,... Infinera's DTN-X Solution Deployed for the Delivery of 100Gb/s Services Across MediterraneanMarch 11, 2013...Infinera, a provider of digital optical networks based in Sunnyvale,
California USA, and Telecom Italia Sparkle Group, announced the
MedNautilus’ deployment of the Infinera DTN-X platform across the
Mediterranean to increase capacity up to 100Gb/s international connectivity
services. MedNautilus, the Mediterranean operations of the Telecom Italia
Sparkle Group, operates the largest protected submarine cable network in the
Mediterranean connecting Italy, Greece, Turkey, Israel and Cyprus, and... Cree and Eta Devices to Demonstrate the Most Efficient Power Amplifier for Mobile Base StationsFebruary 25, 2013...Cree, Inc. and Eta Devices, Inc. will demonstrate what the company's claim
to be the world's most efficient power amplifier for mobile base stations at
the 2013 Mobile World Congress, February 24-28 in Barcelona, Spain.
While current generation mobile base station amplifiers using silicon LDMOS
transistors can provide amplifier efficiencies up to 45 percent, Eta Devices
says its next-generation power amplifiers can deliver greater than...
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... IQE of Cardiff, UK announced the launch of gallium nitride based, high electron mobility transistor (GaN HEMT) epitaxial wafers on 150mm diameter semi-insulating silicon carbide (SiC) substrates. The SiC substrates are supplied by the WBG Materials subsidiary of II-VI Inc., a provider of optoelectronic components. IQE says that GaN power amplifiers offer superior power capability, efficiency, bandwidth and linearity... 
