| Excelitas Technologies Introduces 905nm Pulsed Laser Diode May 13, 2013...Excelitas Technologies’ Surface Mount 905 nm pulsed semiconductor laser is designed specifically for high volume applications such as laser therapy, range finders, safety light curtains and adaptive cruise control. Multi-cavity layers concentrate the emitting source size and create three emitting active areas. When operated at 30A, these areas produce 70W of peak optical output power on average. The laser is... Osram Coordinating BMBF Project for Infrared Laser SourcesFebruary 22, 2013...As part of the ‘Integrated Microphotonics’ initiative, Osram
Opto Semiconductors is coordinating the IMOTHEB project (integrated
microoptical and microthermal elements for diode lasers of highbrilliance). The
goal is to improve the performance and reduce production costs of laser
systems. The project partners are DILAS Diode Laser and the Max Born Institute.
The project (FKZ 13N12312), which is supported by the German Ministry for
Education and Research... Modulight Launches 1W RGB LimeLight Laser Modules Claiming Smallest Form FactorJanuary 28, 2013...Modulight, Inc., of Tampere, Finland and San Jose, California
launched the new version of its LimeLight laser systems that are
half the volume of previous systems claiming it is the smallest RGB
laser solution. The systems produce 1W output power at 635nm, 532nm
and 465nm. It measures just 80mm x 80mm by 40mm. The firm says that
the systems offer a spread of wavelength from... BRIDLE Consortium to Develop High Brilliance Diode Lasers For Industrial ApplicationsJanuary 2, 2013...BRIDLE, a consortium of companies and research institutes from five European countries has joined forces in a common EC funded research project to achieve dramatic improvements in the brilliance of high-power direct diode laser systems. Coordinated by DILAS Diodenlaser GmbH in Germany, the consortium includes researchers from University of Nottingham, United Kingdom, the Fraunhofer Institute for Laser Technology ILT and... Nichia Develops Higher Power Green Laser DiodesNovember 23, 2012...Nichia Corporation reports that it has successfully developed a high-power pure green laser diode which has optical output power higher than 1W with 525nm lasing wavelength. Nichia says that the laser will be applied to display applications such as Laser TV. Nichia reportedly optimized the epi-structures based on c-plane GaN substrates to achieve the improved performance.
Nichia says that as... Researchers Demonstrate Compound Semiconductor Laser Structure on SiliconOctober 15, 2012...Tyndall National Institute (University College Cork), Semprius Inc. and Seagate Technology successfully combined a high power compound semiconductor laser structure with a silicon substrate. The device employs Semprius’ proprietary micro-transfer print technology to print epitaxial layers produced by IQE at its Cardiff manufacturing facility. The optoelectonic integration has the potential to allow HAMR to meet growing demand in the high... UCSB Researchers Demonstrate First Non-polar GaN VCSELsSeptember 24, 2012...Researchers at the University of California, Santa Barbara (UCSB) successfully demonstrated a non-polar m-plane (10-10) nitride semiconductor vertical-cavity surface-emitting laser (VCSEL) diode. [Casey Holder et al, Appl. Phys. Express, vol5, p092104, 2012]".
According to the researchers, nonpolar group III–nitride materials have the potential
to yield the highest performance visible light emitting devices. In these materials, the absence of polarization related
electric fields... Princeton Optronics Announces 808nm high power VCSEL Illuminator for High Speed PhotographyAugust 27, 2012...Princeton Optronics Inc. announced the availability of 808nm high power illuminator model (PR-HPIL-800-W808). The illuminator comprised of multiple Vertical Cavity Surface Emitting Laser (VCSEL) arrays with power output of 800W. Such illumination is required for high speed photography.
The increased frame rate (or reduction of frame time) means that the number of available photons per pixel per...
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... Bridgelux Inc., of Livermore California USA, a developer and manufacturer of LED lighting technologies, has closed an agreement with Toshiba Corporation. The agreement was originally announced on April 22, 2013 (See: Coverage), and the companies have now completed the transfer of Bridgelux GaN-on-Silicon technology assets to Toshiba. The agreement includes an expanded licensing and manufacturing supply relationship. Bridgelux says... 
