| NeoPhotonics Opens Sales and R&D Office in Moscow May 20, 2013...NeoPhotonics Corporation announced the opening of a Sales and R&D office
in Moscow and servicing the Russian Federation and the broader eastern European
market.The company is a leading designer and manufacturer of photonic
integrated circuit, or PIC, based optoelectronic modules and subsystems for
bandwidth-intensive, high speed communications networks.
Tim Jenks, Chairman and CEO of NeoPhotonics commented, “Together
with our expanded sales force serving the region, this... Mellanox Agrees to Acquire KoturaMay 20, 2013...Mellanox® Technologies, Ltd. of Sunnyvale, California USA, a supplier of
interconnect solutions for servers and storage systems, has agreed to acquire
Kotura, Inc., a developer of silicon photonics for high-speed networking
applications. Mellanox and Kotura have signed a definitive agreement under
which Mellanox will acquire the privately owned Kotura at a total cash purchase
price of approximately $82 million subject to certain adjustments. The terms... Bridgelux Closes Agreement and Expands Relationship with Toshiba to Drive GaN-on-Silicon DevelopmentMay 20, 2013...Bridgelux Inc., of Livermore California USA, a developer and manufacturer of
LED lighting technologies, has closed an agreement with Toshiba Corporation.
The agreement was originally announced on April 22, 2013 (See: Coverage),
and the companies have now completed the transfer of Bridgelux GaN-on-Silicon
technology assets to Toshiba.
The agreement includes an expanded licensing and manufacturing supply
relationship. Bridgelux says it will continue to develop and market... IQE and II-VI Inc. Launch 150mm GaN HEMT Epi Wafers on SiC SubstratesMay 13, 2013...IQE of Cardiff, UK announced the launch of gallium nitride based, high
electron mobility transistor (GaN HEMT) epitaxial wafers on 150mm diameter
semi-insulating silicon carbide (SiC) substrates. The SiC substrates are
supplied by the WBG Materials subsidiary of II-VI Inc., a provider of
optoelectronic components.
IQE says that GaN power amplifiers offer superior power capability,
efficiency, bandwidth and linearity compared with silicon (Si) or gallium
arsenide (GaAs)-based... Researchers Use Strain Engineering to Improve Green LED Light OutputMay 8, 2013...Researchers from the Chinese Academy of Sciences’ Institute of
Semiconductors, Beijing, and University of Hong Kong have used strain
engineering to improve the light output of Green LEDs. The researchers improved
the light output of a 530nm green LED operating at 150 mA by 28.9 percent [Hongjian Li et al, Appl. Phys.
Express, vol6, p052102, 2013].
The researchers note that green-emitting nitride semiconductor LED
structures tend... TriQuint Produces GaN HEMTs Using GaN-on-Diamond WafersMay 6, 2013...TriQuint Semiconductor, Inc. of Hillsboro, Oregon USA, announced the
production of gallium nitride (GaN) high electron mobility transistors (HEMTs)
using GaN-on-diamond wafers. The GaN-on-diamond wafers substantially reduce
semiconductor temperatures while maintaining high RF performance. TriQuint
successfully transfered a semiconductor epitaxial overlay onto a synthetic
diamond substrate. This provides high thermal conductivity and low thermal
boundary resistance, while preserving critical GaN crystalline layers.
TriQuint demonstrated its new GaN-on-diamond,... CrystAl-N Launches 2-Inch Bulk AlNMay 6, 2013...CrystAl-N, a German maker of AlN crystals is shifting its production from
1-inch to 2-inch AlN and accepting pre-orders of the new material. CrystAl-N is accepting pre-orders now. The company was founded in 2010 as a spin-off of Friedrich-Alexander-University Erlangen-Nuremberg. The company
says that its AlN substrates will boost the efficiency of deep UV LEDs, lasers
and high-power, high-frequency devices as soon as... IQE Launches New, Dedicated Infrared Products DivisionMay 6, 2013...IQE of Cardiff, UK, announced the launch of a new division, ‘IQE
Infrared’. IQE Infrared will provide its customers with a complete
‘one stop shop’ for infrared substrate and epitaxial wafer
materials covering short to very long wavelength (SWIR to VLWIR) regimes. The
new division launch is part of IQE’s overall rebranding to enable the
Group to enhance its customers' experiences in its key markets.
IQE...
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... Bridgelux Inc., of Livermore California USA, a developer and manufacturer of LED lighting technologies, has closed an agreement with Toshiba Corporation. The agreement was originally announced on April 22, 2013 (See: Coverage), and the companies have now completed the transfer of Bridgelux GaN-on-Silicon technology assets to Toshiba. The agreement includes an expanded licensing and manufacturing supply relationship. Bridgelux says... 
