| Infinera Introduces Intelligent Transport Network Architecture June 17, 2013...Sunnyvale, California-based Infinera, has introduced the Intelligent
Transport Network™, an architecture for carriers to provide reliable,
differentiated services at a lower operating cost. Infinera says that the
Intelligent Transport Network reduces operating costs through scale,
multi-layer convergence, and automation. The Intelligent Transport Network can
now provide 500 Gb/s FlexCoherent™ super-channels, and the company claims
it can scale without compromise to enable terabit super-channels and Terabit
Ethernet in... IBM Scientists Create Prototype of Integrated Millimeter-Wave Transceiver for Mobile Communications and Radar ImagingJune 10, 2013...Scientists from IBM have created a SiGe BiCMOS-based prototype of a phased-array transceiver with the millimeter-wave components for both high data-rate communications and advanced-resolution radar imaging applications. IBM says that the newly demonstrated integrated circuits (ICs) allow radar-imaging technology to be scaled down to the size of a computer laptop so pilots can penetrate fog, dust and other vision impairing... Freescale’s RF Business Commits to U.S.-Based Aerospace and Defense MarketJune 10, 2013...Freescale Semiconductor of Seattle, Washington USA, has created a new business unit focused on RF power and RF microwave devices for the U.S. aerospace and defense (A&D) markets. Freescale will add new gallium nitride (GaN) RF transistor products to support the A&D market. The company also plans to leverage its more than 400 LDMOS RF power transistor and... Nothrrop Grumman Corporation Releases GaN-based PAJune 10, 2013...Northrop Grumman Corporation of Redondo Beach, California USA has developed
a new gallium nitride (GaN) flange packaged power amplifier (PA), APN180FP. The
PA is aimed at military and commercial Ka-band satellite communication terminal
and the commercial wireless infrastructure markets. According to the Northrop
Grumman, the product is the company's first commercially available packaged,
GaN-based component.
The APN180FP is a 0.2 mm GaN HEMT MMIC power amplifier... TriQuint Introduces New GaN MMIC Power Doublers for High Output CATV InfrastructureJune 3, 2013...TriQuint Semiconductor, Inc. of Hillsboro, Oregon USA, released its new
gallium nitride (GaN) integrated power doubler for the CATV infrastructure.
TriQuint's new GaN MMIC amplifier offers high gain (24dB), and the company says
it has excellent composite distortion performance (CTB/CSO), which is a
critical characteristic in multi-carrier CATV environments. TriQuint solutions
for cable TV infrastructure and fiber to the premises (FTTP) systems will be
displayed at... Cree Ships Over Two Million GaN HEMT Devices for Telecom InfrastructureJune 3, 2013...Durham, North Carolina-based Cree, Inc., reports it has shipped over two
million GaN high electron mobility transistors (HEMT) for cellular
telecommunications. Cree says that the GaN HEMTs offer benefits over
traditional silicon-based technologies including: higher power, higher
efficiency, and wider bandwidth. Telecommunications companies are looking to
improve channel capacity and the speed of wireless systems, while
simultaneously lowering power consumption of transmission amplifiers.
Cree says its... TriQuint Semiconductor Expands Gallium Nitride OfferingsMay 29, 2013...Hillsboro, Oregon-based TriQuint Semiconductor, a leading RF solutions supplier, announced 15 new gallium nitride (GaN) amplifiers and transistors along with two new GaN processes. The company says that these products offer performance, size and durability advantages for communications, radar and defense RF systems. TriQuint innovation will be displayed at the IEEE IMS / MTT-S convention and exhibition in Seattle, Washington,... Anadigics PAs with InGaP-Plus Technology Enable Samsung’s New Galaxy S4May 20, 2013...Warren, New Jersey USA-based Anadigics, Inc. announced that the
company’s AWL9581 802.11ac front-end IC (FEIC), AWT6651
ProEficient™ power amplifier (PA), AWT6624 HELP4™ PA, and AWC6323
HELP3E™ dual-band PA enable wireless connectivity in the Galaxy S 4 by
Samsung Electronics. This feature-rich smartphone offers a 5-inch full HD Super
AMOLED display, 1.9 GHz quad-core processor, 13 megapixel camera, and Android®
4.2.2 Jelly Bean operating system. The new...
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... Air Liquide of Paris, France, has signed an agreement to acquire Voltaix Inc., a U.S.-based electronics materials company. The acquisition is expected to close later this summer, pending applicable regulatory approvals. Air Liquide, with its ALOHA™ product line, supplies precursors for semiconductor manufacturing. Precursors are molecules with specific physical and chemical properties that are used in depositing layers during... 
