IQE and II-VI Inc. Launch 150mm GaN HEMT Epi Wafers on SiC Substrates
... IQE of Cardiff, UK announced the launch of gallium nitride based, high electron mobility transistor (GaN HEMT) epitaxial wafers on 150mm diameter semi-insulating silicon carbide (SiC) substrates. The SiC substrates are supplied by the WBG Materials subsidiary of II-VI Inc., a provider of optoelectronic components. IQE says that GaN power amplifiers offer superior power capability, efficiency, bandwidth and linearity compared with silicon (Si) or gallium arsenide (GaAs)-based technologies commonly used. IQE contends that GaN power amplifiers also lower overall system costs. Additionally, the company says that GaN-based low-noise amplifiers exhibit improved robustness, noise figure and dynamic range when compared...