Rohm Claims First Mass-produced SiC MOS Module Without Schottky Diode

Rohm Co Ltd of Kyoto, Japan has started mass-production of the BSM180D12P2C101 1200V/180A-rated silicon carbide (SiC) metal–oxide–semiconductor (MOS) module for inverters/converters used in industrial equipment, photovoltaic power conditioners etc… The company says that the new module is the first to incorporate a power semiconductor consisting of just an SiC metal–oxide–semiconductor field-effect transistor (MOSFET) – without a Schottky barrier diode (SBD).

According to Rohm, the company increased the device’s rated current to 180A for broader applicability while contributing to lower power consumption and greater compactness. Rohm asserts that its SiC MOSFET technology is used to minimize conduction degradation of the body diode, thus eliminating the need for diode rectification. The company also says that this makes it possible to increase the mounting area for higher current-handling capability while maintaining the same compact form factor.

Rohm says that it was able to overcome problems of reliability through improving processes and device structures related to crystal defects. With no tail current, Rohm says that the device had 50% less loss compared with conventional silicon insulated-gate bipolar transistors (Si IGBTs) used in general-purpose inverters. According to Rohm, the 50% less loss and the operating frequency greater than 50kHz, ensure compatibility with smaller, lighter peripheral components for greater end-product miniaturization.

Category: highpower