RFMD Unveils 2nd Generation High Efficiency PAs

RF Micro Devices, Inc. announced the addition of 6 high efficiency 4G LTE power amplifiers (PAs) to its product portfolio. RFMD says that the new PAs deliver superior peak efficiency and current consumption in LTE mode. The company says that they complement RFMD’s first-generation family of ultra-high efficiency PAs for WCDMA applications. RFMD points out that with the addition of the six new LTE PAs, its product family now covers WCDMA bands 1, 2, 3, 4, 5, and 8, and LTE bands 4, 7, 11, 13, 17, 18, 20, and 21.

The company boasts that its products have superior data throughput, battery life, and thermal performance. According to RFMD, the new PAs offer peak efficiency of 42%-44% in LTE mode, significantly above competitive product portfolios. RFMD’s LTE PAs also offer unprecedented linearity at the highest power conditions, enabling bandwidths up to 20MHz and resulting in higher data transfers.

RFMD says that in both 3G and 4G LTE, RFMD’s ultra-high efficiency PAs deliver best-in-class current consumption across all power levels and in all modes and bands. RFMD asserts that as power management schemes such as average power tracking (APT) and envelope tracking (ET) are increasingly adopted in 2012, the company will strengthen its leadership.

Eric Creviston, president of RFMD’s Cellular Products Group (CPG), said, “We expect strong growth and market share gains in 3G and 4G LTE as our ultra-high efficiency product portfolio continues to expand.”