Raytheon Demonstrates 3X Increase in Power Density of GaN-on-Diamond Compared to GaN-on-SiC

Raytheon of Tewksbury, Massachussets USA, has demonstrated that gallium nitride (GaN)-on-diamond enables a 3X increase in transistor power density compared to GaN on silicon carbide. The demonstration used a 10x125um (1.25mm) GaN-on-diamond HEMT. The result builds on the company’s prior successes, including the company’s industry-first demonstration of GaN-on-diamond transistors in 2009, and GaN-on-diamond MMICs in 2011. The development was funded through the Defense Advanced Research Projects Agency (DARPA) Near Junction Thermal Transport initiative under the Thermal Management Technologies program.

Joe Biondi, vice president of Advanced Technology for Raytheon’s Integrated Defense Systems (IDS) business said, “We are now inserting GaN into DoD systems while remaining focused on continuing to increase performance of this revolutionary semiconductor to provide our warfighters with the most advanced sensing, communications and electronic warfare capabilities in the world.”

Raytheon Company also recently reported that under the DARPA MTO Wide Bandgap Semiconductor Program for the DOD, the company  systematically developed GaN from into transistors, MMICs, Transmit/Receive (T/R) Modules and finally Transmit/Receive Integrated Multichannel Modules (TRIMMs).