UK firm Plessey Semiconductors announced a strategic partnership with Jasper Display Corp (JDC) of Taiwan. Plessey intends to utilize JDC’s silicon backplane to drive the monolithic microLED displays produced on Plessey’s proprietary GaN-on-Silicon (GaN-on-Si) wafers.
JDC tailored the eSP70 silicon backplane for the requirements of micro LED devices. The full-color-capable active matrix backplane provides a resolution of 1920×1080 and features pixel pitch of just 8µm. JDC says that the backplane offers superior current uniformity using a proprietary current source pixel as well as flexible addressing.
JDC’s eSP70 backplane lets Plessey utilize its GaN-on-Si platform for fabricating micro LEDs that deliver very high brightness with moderate power consumption or run with low power while maintaining daylight-usable brightness levels.
Plessey says its monolithic micro LED technology challenges existing display technologies such as LCD and OLED and combines extremely low power, high brightness, and very high pixel density. The company asserts that this combination of performance improvements can potentially disrupt numerous existing application sectors and create entirely new ones.
JDC’s Backplane Technology Works with Plessey’s GaN-on-Silicon Wafers
JDC’s VP marketing and product management, T.I. Lin, commented, “Our JD27E series demonstrates our ability to deliver what our valuable partner Plessey and the wider industry has been waiting for – silicon that has been designed with their micro LED needs in mind. Our X-on-Silicon backplane technology for micro LED can be customized on a per-project basis, allowing us to make specialized silicon suiting needs ranging from low-power AR headsets all the way to automotive headlights.”
Dr. Keith Strickland, Chief Technology Officer at Plessey, explained, “JDC’s micro LED specific silicon backplane allows Plessey to rapidly bring to market our monolithic full-color micro LED array at our entry level 8µm pixel size.”