Picosun Oy of Espoo, Finland, a supplier of industrial atomic layer deposition (ALD) solutions, Atom Semicon Co. Ltd. of Taiwan, and National Chiao Tung University (NCTU, Taiwan) have begun a collaboration to improve GaN (gallium nitride) devices. Mr. Xiaopeng Wu, CEO of Picosun Asia, and Professor Hao-Chung Kuo from the Institute of Electro-Optical Engineering of NCTU announced the collaboration, which will employ Picosun’s ALD technology. They made the announcement at the 3rd ALD Taiwan workshop arranged on 23rd June 2017 that Picosun, NCTU, and Atom Semicon arranged.
GaN-based components such as HEMTs (high electron mobility transistors), offer superior efficiency and operate with low energy consumption. Furthermore, they deliver a highly reliable and fast response, and they enable significant chip size miniaturization with the help of high integration and smart circuit design. These features give GaN-components a substantial benefit especially in sensing systems and wireless communication.
GaN-components are already widely used in power amplifiers for mobile base stations and radars, for example. Other applications include sensor systems for IoT (Internet of Things), power conversion, photovoltaic power conditioning, and electric transportation, and various fields of industry.
The three-way collaboration among Picosun, NCTU, and Atom Semicon will directly support the manufacturers using GaN technology. Picosun points out that intelligent ALD solutions can improve the performance and reliability of the devices and accelerate the R&D phase of innovative components. This sped up R&D phase shortens the time-to-market for products and grants a competitive edge to the manufacturers. In addition to supplying its advanced ALD thin film coating technology expertise, Picosun says it can also offer turnkey production solutions.