Picosun Oy of Espoo, Finland and Hitachi High-Technologies Corporation of Tokyo, Japan have announced a collaboration for the development of plasma-enhanced atomic layer deposition (PE-ALD).
The goal of the co-operation is to improve thin film coating technologies. Picosun says that the joint development from the two firms, Microwave Electron Cyclotron Resonance (ECR) ALD technology, will disrupt all advanced semiconductor industries.
The ECR ALD technology integrates Hitachi High-Tech’s ECR plasma generator with Picosun’s digitally controlled ALD system. Together, the quality of the deposited materials is substantially improved, and the deposition process is much more precise than traditional ALD and plasma-enhanced ALD methods.
The companies contend that the technology has already achieved superior results for various nitride and oxide films with 300 mm semiconductor wafers, and the two firms are evaluating other process applications.