Alta Devices and Power Oasis Partner on Battery and Solar UAV Reference Design

Alta Devices of Sunnyvale, California USA and PowerOasis of Swindon, UK are partnering to develop a reference design to integrate solar and lithium-ion (Li-ion) battery power systems for small unmanned aerial vehicles (UAVs). According to the companies, the UAV reference design will combine the hybrid power systems expertise of Power…

CIGS Company Siva Power Adds $25 in Funding

Siva Power of Santa Clara, California USA, a fabricator of CIGS thin-film solar technology, reported the closing of a $25 million funding round. The company says it intends to use the funding to build out its pilot production line and develop the company's CIGS solar module business. The $25 million…

Mitsubishi Electric to Showcase GaN Envelope-Tracking PA Technology

Mitsubishi Electric Corporation of Tokyo, Nokia Bell Labs and the Center for Wireless Communications at UC San Diego announced the joint development of the first ultra-fast gallium nitride (GaN) envelope-tracking power amplifier (PA). The PA supports modulation bandwidth up to 80MHz and is expected to reduce energy consumption in next-generation…

Rohm Releases 1200V SiC Power Modules

Kyoto-based firm Rohm announced the development of 1200V 400A/600A rated full SiC power modules (BSM400D12P3G002/ BSM600D12P3G001). Rohm optimized the SiC power modules for inverters and converters in power supplies for industrial equipment, solar power conditioners, and UPS. An optimized heat radiation design enables the BSM600D12P3G001 to achieve a rated current…

Cree CEO to Step Down

Cree, Inc. reported that company chairman, president, and CEO Chuck Swoboda will step down from his executive positions and his membership of the board of directors. Mr. Swoboda plans to stay at the company until the board of directors appoints a successor. Afterward, he will remain available as a consultant…

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Northrop Grumman Corporation achieves Nitride HEMT success with Thomas Swan MOCVD

Aachen, Germany–Aixtron AG today announced that Northrop Grumman Corp. has been able to quickly achieve outstanding material quality and uniformity for AlGaN/GaN on silicon carbide (SiC) high electron mobility transistor (HEMT) devices on their Thomas Swan Close Coupled Showerhead (CCS) epitaxial growth production system. The 7×3” CCS MOCVD production system …

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Getting Ready for the Next Big Events

With Photonics West and Strategies In Light under our collective belts, the 2006 event season is now in full swing. Next up of major importance to the compound semi (CS) and solid state lighting (SSL) industries are Compound Semiconductor MANTECH, April 24-27 and CompoundSemi Vision 2006, April 27-28 for business …

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Advanced Power Technology & Northrop Grumman Enter Into Silicon Carbide License Agreement

Next Generation Chip Technology for Power Electronics in Military and Commercial Applications Ranging from Radar to Hybrid Vehicles… BEND, Oregon USA — Advanced Power Technology, Inc. (NASDAQ: APTI, a leading supplier of high performance power semiconductors announced today that the company has entered into a license agreement with the Electronic …

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