MACOM Launches Low Noise Wideband Amp

MACOM Technology Solutions Inc. of Lowell, Massachusetts USA, introduced the MAAL-011141-DIE.  MACOM’s MAAL-011141-DIE wideband low noise amplifier operates from DC to 28 GHz According to MACOM, the MAAL-011141-DIE offers low noise figure across the full frequency range. The company says that this low noise figure enables signal integrity for wideband…

New Monocrystal Ultra-Clean Sapphire Wafers for MicroLEDs

Monocrystal of Stravopol, Russia, announced the release of its new Ultra-Clean sapphire wafers. The company says it applied its cleaning technology to achieve a breakthrough in wafer surface quality. According to Monocrystal, high-precision optoelectronic applications including microLEDs require such high surface quality sapphire wafers. Furthermore, a number of leading LED producers are…

GaN Systems Again Sponsors CPSS GaN Inverter Design Competition

GaN Systems reports that it is again sponsoring the annual China Power Supply Society (CPSS) design competition. The CPSS, the China Power Society Science Popularization Committee, and the Nanjing University of Aeronautics and Astronautics are conducting a contest to design highly efficient, high power density, GaN-based inverters. The third annual competition’s…

UCSB Orders New Riber MBE System for Chalcogenides Research

Riber of Bezons, France, reported that the University of California Santa Barbara, USA, has ordered a research MBE system, model Compact 21 T. The university intends to use the system to research on chalcogenides, a class of materials that some expect to have applications in detecting and emitting light in…

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Microsemi (via APT) to Become Exclusive Foundry Supplier of Northrop Grumman’s SiC Device Technology

Exciting news for the compound semi wide bandgap (WBG) community is that Northrop Grumman’s famed silicon carbide (SiC) device technology will finally move into the commercial arena. The giant USA defense contractor, Northrop Grumman, recently entered into an exclusive foundry supplier license agreement with Advanced Power Technology, Inc. (APT) of …

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New Gallium Nitride Film Method Beats the Heat

Los Alamos, New Mexico USA– A team of Los Alamos National Laboratory scientists have developed a method for growing crystalline gallium nitride films at lower temperatures than industry standards. By eliminating the higher temperatures and harsh, reactive environments that currently limit the types of materials used as substrates, the discovery …

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Endwave Delivers Its First RoHS Compliant Transceivers to the Wireless Industry

Endwave Transceivers Qualified Well Ahead of Upcoming July 1, 2006 Deadline Sunnyvale, California USA– Endwave Corporation, a leading provider of high-frequency RF modules for telecommunications networks, defense electronics, and homeland security systems, announced the delivery of their first transceiver designed to be fully compliant with the new environmental Restriction on …

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Los Alamos Scientists Report Lower Temperature GaN Growth Method

Scientists at Los Alamos National Laboratory have reported developing a method for growing crystalline gallium nitride films at lower temperatures than industry standards. The team described the use of neutral atom-beam lithography/epitaxy to grow crystalline and polycrystalline gallium nitride films on bare c-axis-oriented sapphire. The method discussed in Applied Physics …

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