The University of Tokyo and Mitsubishi Electric Showed New Method for Enhancing SiC Reliability

The University of Tokyo and Mitsubishi Electric Corporation reported having developed what they believe to be an all-new mechanism for improving the reliability of silicon carbide (SiC) power semiconductor devices. The researchers initially reported the achievement at The International Electron Devices Meeting (IEDM2018) in San Francisco, California on December 3…

Inergy Kodiak Extreme Portable Generator to Feature Transphorm's GaN Technology

Transphorm Inc. along with solar energy innovator Inergy and design partner Telcodium Inc. announced that the upcoming Inergy Kodiak Extreme employs high-voltage GaN technology. The soon-to-be-released Kodiak Extreme portable electric generator from Inergy utilizes a photovoltaic (PV) inverter and battery charger integrating Transphorm’s JEDEC-qualified GaN platform. [caption id="attachment_287821" align="alignleft" width="277"]…

G&H Installs Veeco SPECTOR IBS Optical Coating System

Gooch & Housego (G&H), a supplier of high quality super-polished optical components, announced the successful installation of Veeco’s SPECTOR® Ion Beam Sputtering (IBS) Optical Coating System. The installation of the SPECTOR IBS Optical Coating System at G&H’s Moorpark, California facility supports G&H’s growing portfolio of optics for visible, ultraviolet, and…

AquiSense Partnering with U.S. EPA and Washington University on UV LED Disinfection System Research and Development

AquiSense Technologies reported that it signed a Cooperative Research and Development Agreement (CRADA) with United States Environmental Protection Agency (EPA) and Washington University to further advance UV LED disinfection system development. For the CRADA partnership, AquiSense is working with US EPA researchers at the National Homeland Security Research Center (NHSRC)…

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IMEC to Offer AlGaN/GaN HEMTs on Silicon

IMEC, a leading European nanotechnology research company, has reportedly demonstrated the growth of low-sheet-resistivity AlGaN/GaN high-electron mobility transistors (HEMTs) on 150mm silicon (Si) wafers. According to the company headquartered in Leuven, Belgium, the growth process will allow the development of high-efficiency/high-power systems that go beyond silicon capabilities. The company used …

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IMEC Demonstrates Growth of GaN High-Electron Mobility Transistors on 150 mm Silicon

Presented at the 13th International Conference on Metal Organic Vapor Phase Epitaxy – Miyazaki, Japan Leuven, Belgium — IMEC, Europe’s leading independent nanoelectronics and nanotechnology research institute, has demonstrated the growth of low-sheet-resistivity AlGaN/GaN high-electron mobility transistors (HEMTs) on 150mm silicon (Si) wafers. The process paves the way to low-cost …

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