Delta Electronics Uses Transphorm's GaN FETs

Transphorm Inc.and Delta Electronics reported that the power supply unit (PSU) of Delta Electronics' newest innovation comes from the use of Transphorm’s high-voltage (HV) GaN FETs. Delta’s latest 80Plus Platinum 800 Watt power supply unit now also offers a backup lithium-ion battery. So, in the case of a power outage…

Plessey Orders Aixtron AIX G5+ C System for MicroLED Production

German company Aixtron SE reported that UK firm Plessey Semiconductors ordered Aixtron's AIX G5+ C Planetary Reactor®. Plessey intends to use the metal organic chemical vapor deposition (MOCVD) system to increase its manufacturing capability of gallium nitride on silicon (GaN-on-Si) epitaxial wafers for next-generation microLED applications. The AIX G5+C MOCVD…

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Commercialization of Two-inch AIN Substrates Announced at OIDA Forum

Washington–At the Optoelectronics Industry Development Association (OIDA) Nitride LED and Laser Technology Forum held May 11th in Palo Alto, Calif., Crystal IS announced the commercial availability of the first ultra low defect density 2-inch native AlN wafers, a technology especially suited for ultraviolet (UV) solid state lighting and lasers and …

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Court Awards Color Kinetics Costs and Attorney’s Fees in Case Against Super Vision

Boston, Massachussetts USA–Color Kinetics Incorporated, a leading innovator of LED lighting systems and technologies, today announced that the United States District Court for the District of Massachusetts awarded Color Kinetics its costs and attorneys’ fees in its successful patent litigation against Super Vision International, Inc., pending documentation of the costs …

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Osram Claims Laser Bar Breakthrough

Osram Opto Semiconductors reported that that a collaboration with laser specialists Dilas Diodenlaser GmbH achieved a laser bar performance breakthrough. Osram claimed that its laser bars have set a new world record of 808 nanometers (nm) with an optical output of 120 watts (W). The collaboration is part of the …

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