CST Global Increases Laser Chip Inspection Capacity

CST Global, a wholly-owned subsidiary of Sivers IMA Holdings AB, reported that the company successfully installed and commissioned an Opto Systems VVSP4000, automatic pick and place, visual inspection system at its fabrication facility in Blantyre, Glasgow, UK. The machine performs visual inspections of both the top side and facets of…

PowerSphyr and GaN Systems Developing GaN-based Wireless Power Systems

PowerSphyr of Danville, California USA, a pioneer in wireless charging, and GaN Systems, a fabless developer of GaN (gallium nitride) power semiconductors, announced a strategic agreement to bring state-of-the-art GaN-based wireless power systems to market. PowerSphyr and GaN Systems to Bring Wireless Charging to Applications Beyond Phones Under the agreement,…

Max Planck Institute Purchases Veeco GEN10 Automated MBE Cluster System for Research into Oxide-Nitride Layer Structures

Plainview, New York USA-based Veeco Instruments Inc. reported that the Max Planck Institute of Microstructure Physics, Halle (Saale), Germany (MPI-MSP) ordered the dual chamber GEN10™ automated molecular beam epitaxy (MBE) cluster system. The Max Planck Institute cited reliability and the ability to customize the system as critical factors in its…

Compound Semiconductor Applications Catapult Awarded £51 million

UK Chancellor Philip Hammond announced that Catapult will receive £51 million of grant funding from the UK's £780m investment in the Catapult network as part the government’s industrial strategy. The Compound Semiconductor Applications Catapult is a Not-for-Profit organization headquartered in South Wales, whose mission is to accelerate the adoption of…

Fujitsu Effectively Triples Range of Weather Radar with GaN HEMT Improvement

Fujitsu Limited and Fujitsu Laboratories Ltd. reported that they have developed a crystal structure that both increases current and voltage in gallium-nitride (GaN) high electron mobility transistors (HEMTs). According to the companies, this performance improvement effectively triples the output power of transistors for microwave band transmitters. Fujitsu says that applying…

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Crystal IS Announces Release of Native 2-Inch AlN Substrates

Crystal IS of Washington D.C. has announced the release of 2-inch native aluminum nitride (AlN) wafers at the Optoelectronics Industry Development Association (OIDA) Nitride LED and Laser Technology Forum in Palo Alto, California USA, May 11th. The company says the technology is especially suited for ultraviolet (UV) solid state lighting …

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