2D ALD System Developed by Oxford Instruments and Eindhoven University

The ALD and 2D technical specialists at Oxford Instruments have teamed up with Eindhoven University of Technology research teams to develop the FlexAL-2D atomic layer deposition (ALD) of 2D transition metal dichalcogenides for nanodevice applications.

The FlexAL-2D ALD system for growing of 2D materials has several benefits compared to conventional ALD systems.

Benefits of FlexAL-2D ALD Compared to Conventional ALD Systems

The FlexAL-2D ALD system can grow 2D materials at CMOS compatible temperatures. The device offers precise digital thickness control over 200mm wafers. The system can create advanced 2D device structures, and the one tool can grow ALD dielectrics & other ALD layers on 2D materials.

Also, the system allows RF substrate biasing for the control of film properties. Furthermore, the FlexAL-2D ALD system can control basal plane or edge plane orientation. The oxygen and carbon free (<2%) growth process features high growth per cycle of about 0.1 nm.

Eindhoven researchers plan to present the first results on the growth of 2D MoS2 material by ALD at 450°C and lower temperatures at the ALD conference in Denver. The researchers used Plasma-enhanced ALD to synthesize layers of 2D MoS2 films with tuneable morphologies such as in-plane and vertically standing nano-scale architectures on CMOS compatible SiO2/Si substrates. The 2D in-plane morphology has potential applications in nanoelectronics, and the 3D fin structures are perfect for catalysis applications including water splitting.

Dr. Ageeth Bol noted, “For CVD processes, typically temperatures of over a 800 degrees Celsius are needed. That is often fatal for applications in semiconductors because the high temperature increases the diffusion of the atoms, which makes it harder to place them at the right spot. We want to have a process that yields materials of high quality at lower temperatures. This is especially important for the two-dimensional heterogeneous layers I am working on, since at lower temperatures less diffusion of atoms between the layers will occur.”