Osram Opto Semiconductors of Regensburg, Germany, has produced a broad area laser diode which achieved a lateral brilliance of up to 4.8 W/(mm*mrad) in the laboratory. The company boasts that the new laser has achieved a record output power for Osram Opto that is 10 percent higher than the company’s previous lab-based record.
As the company points out, the more brilliant the laser, the more efficiently it can inject its light into optical fibers. This more efficient injection into optical fibers thereby increases the output power of modules for pumping fiber lasers used in material processing.
The development was part of the now completed (IMOTHEB) project which was funded through the German Federal Ministry of Education and Research. Brilliance is a measure of the combination of beam quality and optical output power.
Factors Affecting Brilliance
The more brilliant the beam source, the higher its power density, the narrower its light beam, and the much smaller its beam divergence. In fiber-coupled laser systems, the more brilliant the laser, the more light can it can inject into an optical fiber.
The laser achieved a lateral brilliance of up to 4.8 W per millimeter and milliradiant (W/(mm*mrad)), which was one of the highest known values for broad area laser diodes. The company said it optimized the chip design through the integration of microoptical and microthermal elements for beam shaping.
The Max Born Institute provided essential support for the chip development work of the project in the form of extensive methodologies and analyses. Osram Opto now intends to develop laser products based on the improved design.