OSI Laser Diode Introduces InGaAs APD module

OSI Laser Diode, Inc. (LDI) of Edison, New Jersey USA, an OSI Systems Company, introduced the LAPD 3050, an indium gallium arsenide (InGaAs) avalanche photodiode (APD) module. LDI designed the APD module for signal transmission and light level detection applications. The new 50 µm active area device features low back reflection, low dark current, and high speed (2.5 GHz).

OSI Laser Diode- avalanche photo diode (APD) module

OSI Laser Diode- APD (avalanche photo diode) module

The module, which comes in a miniature package, has a spectral response from 1000 nm to 1650 nm at 25 degrees C, and its typical operational wavelength is 1550 nm. The overload-tolerant LAPD 3050 module comes in a hermetically sealed 3-pin coaxial package and is coupled to a single-mode fiber pigtail.

The device is ideal for use in line receivers, long haul applications, and optical time-domain reflectometers (OTDRs). The breakdown voltage ranges from 50 V (min.) to 70 V (max.), and its operating and storage temperatures go from -40 degrees C to +85 degrees C.