Researchers at the Norwegian University of Science and Technology (NTNU) have successfully grown GaAs nanowires on graphene. The technology underpinning their approach was recently described in a publication of Nano Letters. The patented method of growing semiconductor nanowires on atomically thin graphene uses MBE (molecular beam epitaxy) to grow the nanowires. The nanowires are reportedly grown under gallium droplets (self catalyzed), thereby avoiding foreign elements in processing or operation.
The group fabricated photodetectors with high responsivity from single GaAs nanowires grown on graphitic substrates. Spin-off company, CrayoNano asserts that semiconductor nanowires epitaxially grown on graphene can function both as a transparent electrode as well as an epitaxial