Cree, Inc. reported that it signed a patent license agreement with Nexperia BV, a Dutch company. The non-exclusive, worldwide, royalty-bearing patent license agreement grants Nexperia access to Cree’s extensive gallium nitride (GaN) power device patent portfolio. This GaN power device portfolio includes over 300 issued U.S. and foreign patents that detail innovative aspects of GaN Schottky diodes, and high electron mobility transistor (HEMT) devices. The portfolio also describes unique device structures, materials and process improvements, and packaging technology.
GaN Power Device Portfolio Features 75 Issued U.S Patents and Their Foreign Counterparts (Over 300 Total)
The patent license involves no transfer of technology (meaning that it is not a cross-licensing agreement, but just a one-way patent license agreement with Cree licensing its technology to Nexperia). The licensed portfolio includes 75 issued U.S. patents and their foreign counterparts (over 300 total). The U.S. Patent and Trademark Office issued the U.S. patents being licensed as long ago as 2001 and as recently as 2013.
“Cree was founded to develop novel compound semiconductor materials like GaN and SiC and to create devices that capitalize on their unique properties,” said John Palmour, Cree co-founder and CTO of Wolfspeed, a Cree company. “Cree’s decades of innovation are now yielding devices that enable market introductions of new power management and wireless systems. To help facilitate the growth of these new markets, Cree is licensing its GaN power device patents for GaN power-management systems.”