Qorvo® of Greensboro, North Carolina claims that its new gallium nitride on silicon carbide (GaN-on-SiC) RF power transistor offers the world’s highest power. The QPD1025 GaN-on-SiC transistor operates with 1.8KW at 65 volts. According to the company, the device delivers the excellent signal integrity and provides the extended reach, which is critical for L-band avionics and Identification Friend or Foe (IFF) applications.
Like the company’s other GaN-on-SiC products, the QPD1025 offers design advantages including high power density, reduced size, excellent gain, high reliability, and process maturity.
Asif Anwar, executive director of Strategy Analytics’ Strategic Technologies Practice, said, “Qorvo’s QPD1025 transistor represents a true game-changer in this segment. It offers comparable pulsed power and duty cycle performance to silicon LDMOS and silicon bipolar devices, but with a marked improvement in efficiency. Qorvo further achieves this high power and efficiency without introducing exotic materials such as diamond into the process flow for thermal management, ensuring a solution that is cost-effective.”
Roger Hall, general manager, Qorvo High Power Solutions, said, “This new high-power transistor will save customers time and money by eliminating the difficult exercise of combining amplifiers to create multi-kilowatt solutions. The QPD1025 has significantly better drain efficiency and beats LDMOS by nearly 15 percentage points of efficiency, which is significant in IFF and avionics applications.”
Engineering samples of the QPD1025 are now available from Qorvo