Efficient Power Conversion (EPC) of El Segundo, California, has launched a 200 V gallium nitride (GaN) power transistor. The company asserts that the GaN power transistor is one-twelfth the size of equivalently rated silicon MOSFETS. EPC created the EPC2046 GaN power transistor for AC-DC power supplies, wireless power, robotics, multi-level, solar micro inverters, and low inductance motor drives. The power transistor has a voltage rating of 200 V and maximum RDS(on) of 25 mΩ with a 55 A pulsed output current.
According to EPC, the chip-scale packaging of the EPC2046 handles thermal conditions far better than the plastic packaged MOSFETs. This improved heat dissipation is the result of the heat dissipating directly to the environment with such chip-scale devices. However, the heat from a MOSFET die is held within a plastic package. The device measures just 0.95 mm by 2.76 mm (2.62 mm2).
The device measures just 0.95 mm by 2.76 mm (2.62 mm2). EPC says that with the new power transistor, designers can have both small size and excellent performance.
“Manufactured using our latest fifth-generation process, the EPC2046 demonstrates how EPC and gallium nitride transistor technology is increasing the performance and reducing the cost of eGaN® devices. This opens up entirely new applications beyond the reach of the aging silicon MOSFET and offers a big incentive for users of MOSFETs in existing applications to switch,” said Alex Lidow, EPC’s co-founder and CEO.
The 2-inch by 1.5-inch EPC9079 development board features a 200 V maximum device voltage, half bridge with onboard gate driver. The development board uses the EPC2046, as well as an onboard gate drive supply and bypass capacitors. The company designed the board for optimal switching performance, and the board has all the critical components for easy assessment of the 200 V EPC2046 eGaN FET.
Price and Availability
Both the EPC2046 eGaN FETs and the EPC9079 development boards are available for immediate delivery from Digi-Key.