Mitsubishi Launches 10 Gbps DFB Laser Diode

The Electronic Device Group of Mitsubishi Electric & Electronics USA, Inc.,
based in Sunnyvale, California USA, has introduced a new series of InGaAsP-based
10 gigabit per second (Gbps) distributed feedback (DFB) laser diodes. The device,
called the ML9XX18 series, integrates an electro-absorption (EA) modulator to
create a 1550-nm wavelength light source that is stable for short- and intermediate-reach
data transmissions of up to 50 km. “This series of DFB laser diodes brings
integrated EA modulator cost savings to 50-km communications
,” said Daniel
Chen, assistant VP of High Frequency Products for Mitsubishi Electric & Electronics
USA, Inc. “EA modulated DFB laser diodes also have the advantage of being
a very compact 50-km communication solution
.” The new LD typically features
a high extinction ratio of 11 decibels, a high side-mode suppression ratio of
40 decibels, and a fast response time of 30 picoseconds. It is being offered
in a chip-on-carrier type package and is now available in volume production.