Mitsubishi Electric Corporation of Tokyo, Japan, reported that it plans to introduce a Ka-band (26-40GHz) 8W gallium nitride (GaN) power amplifier for satellite earth stations. The high-electron mobility transistor (HEMT) monolithic microwave integrated circuit (MMIC) amplifier, designated the MGFG5H3001, offers low distortion and an output power rating of 8W. The device also boasts a small footprint that the company says will help to reduce the size of power transmitters. Mitsubishi Electric plans to begin shipping samples of the device on November 1.
Satellite Networks Increasingly Use Higher Frequency Ka-band
Currently, satellite networks are primarily used for high-speed communication during natural disasters and in remote areas where ground networks are difficult to construct. Such networks mainly use the C-band (4-8GHz) and Ku-bands (12-18GHz). However, higher frequency devices are increasingly being used for this purpose. Additionally, deployments in the higher-frequency Ka-band are increasing.
Mitsubishi Electric says its new Ka-band GaN-HEMT MMIC will help satisfy the increasing demand for higher frequency deployments. Also, the company expects that its new Ka-band GaN-HEMT MMIC will expedite the development of satellite communications equipment that features extra-high output power and efficiency.
A built-in linearizer achieves low distortion for power transmitters. According to the company, the device also offers high signal integrity. The device design employs one chip that integrates amplifier transistors circuits, matching circuits, and a distortion-reducing linearizer.