Misubishi Electric Introduces SiC Schottky-Barrier Diode

Mitsubishi Electric Corporation of Tokyo, Japan announced the launch of a silicon-carbide (SiC) Schottky-barrier diode (SiC-SBD) that incorporates a junction-barrier Schottky (JBS) structure. This junction-barrier Schottky structure helps reduce the power loss and size of power supply systems for air conditioners, photovoltaic power systems, and more.

Mitsubishi Electric launches SiC schottky-barrier diode

Mitsubishi Electric launches SiC schottky-barrier diode

Mitsubishi Electric pointed out several advantages of Silicon Carbide components. First, silicon carbide improves energy conversion with about 21% less power loss compared to silicon (Si) products. Also, Silicon carbide enables high-speed switching. An additional advantage of silicon carbide is that it allows downsizing of peripheral components, such as reactors.

Mitsubishi Electric says that the JBS structure, which combines the Schottky barrier with a p-n junction, helps the Schottky-barrier diode achieve high reliability.