Mitsubishi Electric Corporation of Tokyo, Japan reported that it has developed a 6.5 kV full silicon carbide (SiC) power semiconductor module that the company says offers the world’s highest power density (calculated from rated voltage and current) of 9.3 kVA/cm3 among power semiconductor modules rated from 1.7 kV to 6.5 kV.
According to the company, the model’s structure with integrated metal-oxide-semiconductor field-effect transistor (MOSFET) and diode on a single chip with its newly developed package make the unprecedented power density possible. Mitsubishi Electric anticipates that the module will lead to smaller and more energy-efficient power equipment for electric power systems and high-voltage railcars. The company stated that it will continue to further develop the technology and conduct more reliability tests.
Mitsubishi Electric claims that the 6.5 kV rated voltage is highest among silicon insulated-gate bipolar transistor (IGBT) power semiconductor modules. The power modules utilize full-SiC technology to enable higher operating frequencies for smaller and more energy-efficient high-voltage power electronics equipment and to improve power density and efficiency.
SiC One Chip Structure Optimizes Heat Dissipation
The device features a novel one-chip structure and a new package that the company created to optimize high heat dissipation and high heat tolerance. Specifically, the insulating substrate offers superior thermal properties and reliable die bonding technology which combine to help facilitate heat dissipation and heat tolerance. The integrated MOSFET and diode on a single chip help drastically reduce the chip area.