Millitech, a microwave brand of Smiths Interconnect based in Northampton, Massachusetts, has released new Gallium Nitride (GaN) based power amplifiers (PAs). According to Millitech, the new PAs have superior output power and power-added efficiency (PAE) at E-Band and W-Band. They provide up to 2.5 Watts of output power and up to 20% PAE. Typical gain figures range from 15 to 40 dB.
Single device models are available with almost 1W of output power. Also, 2-way and 4-way solid-state power amplifiers (SSPAs) with up to 2.5 Watts of saturated output power are available. In addition, the company produces GaN PAs with higher power outputs.
Internal voltage regulation, bias-sequencing circuitry, and reverse voltage protection come standard with each amplifier in the series. Remote sensing, e-band radio, and high power millimeter-wave sources are some of the potential applications for these E-band and W-band GaN PAs. Millitech says that the PAs are high enough in quality for test and measurement applications.
Furthermore, Millitech asserts that the high output power in E-band and W-band PAs eliminate the need for relatively large and expensive combiners and waveguide interconnects needed for less powerful amplifiers.