Microsemi Samples First of its 1200V SiC MOSFETs and Releases Complimentary 1200V SiC Schottky barrier diodes (SBDs)

Microsemi Corporation based in Aliso, Viejo, California USA, announced sampling availability of the first product among its next-generation 1200-volt (V) Silicon Carbide (SiC) MOSFETs, the 40 mOhm MSC040SMA120B. The company also released its complementary 1200 V SiC Schottky barrier diodes (SBDs), further expanding its portfolio of SiC discrete and module ICs.

Microsemi says that the new family of SiC MOSFETs product is highly avalanche-rated, and therefore, rugged enough for industrial, automotive and commercial aviation power applications. The new family of SiC MOSFETs also offers a high short circuit withstand rating.

The company intends to release additional members of the product family in the coming months, including commercially and AEC-Q101 qualified 1200 V and 700 V SiC MOSFET solutions to address a broad range of power applications using Microsemi’s newly released SiC SBDs.

In addition to industrial and automotive market applications, uses for the new SiC MOSFETs and SBDs include switch mode power supplies and motor control for the medical, aerospace, defense and data center markets. Some examples include their use in DC-DC converters, hybrid electric vehicle (HEV)/EV charging, conductive/inductive onboard charging (OBC), EV powertrain/tractional control, photovoltaic (PV) inverters, switch mode power supplies, and motor control and actuation for aviation.

“Our new SiC MOSFET product family provides customers with the benefits of more efficient switching and high reliability, particularly in comparison to Silicon diodes, Silicon MOSFETs and Insulated Gate Bipolar Transistor (IGBT) solutions,” said Leon Gross, vice president and business unit manager for Microsemi’s Power Discretes and Modules business unit. “Customers focused on developing cost-effective power electronics solutions for rugged environments can select their ideal solutions from these next-generation offerings, with the ability to scale to their specific SiC MOSFET needs.”