M/A-COM Technology Solutions Inc. (“MACOM”) of Lowell, Massachusetts USA, announced its MAGb series of GaN power transistors for wireless macro basestations. The MAGb series of power transistors leverages MACOM’s Gen4 GaN technology. The series targets cellular bands within the 1.8 GHz to 3.8 GHz frequency range. MACOM asserts that its new MAGb series achieves superior efficiency, bandwidth and power gain with a linearity and cost structure like LDMOS transistors.
The company claims that when scaled to high-volume production levels it could ultimately offer a cost structure that is better than LDMOS transistors. Initial products of the series include single-ended transistors that offer up to 400 W peak power in small packages. Other members of the series include dual-transistors and single-package Doherty configuration providing up to 700 W peak power in both asymmetric and symmetric power options.
MACOM says that the product series achieves a power efficiency improvement of up to 10% and a package size reduction greater than 15% compared to legacy LDMOS offerings. The company also claims that the MAGb is easier to linearize and correct with digital-pre-distortion (DPD) schemes compared to other GaN technologies.
The first product in the family, the MAGB-101822-120B0S covers 500 MHz of RF bandwidth between 1.7GHz to 2.2GHz and is housed in a small AC-400 ceramic package. It provides over 160 W of peak power and a peak efficiency of 74% with fundamental tuning only and linear gain over 19 dB across the 500 MHz band. Second in this series is the MAGB-101822-240B0S, which has double the output power of the MAGB-101822-120B0S with peak power over 320 W, 19 dB of linear gain and peak efficiency over 72% with fundamental tuning only across the 500 MHz RF bandwidth. The MAGB-101822-240B0S is housed in the AC-780 ceramic package. MACOM says the peak efficiency of both components can be improved to well above 80% when paired with the proper harmonic terminations.