M/A-COM Technology Solutions Inc. introduced the new MAGX-100027-100C0P, a wideband transistor optimized for DC-2.7 GHz operation.MACOM fabricated the transistor using its proprietary 4th generation GaN on Silicon (GaN- on-Si) process. The company began sampling the transistor today. MACOM says that this GaN-on-Si HEMT D-Mode transistor is ideal for wireless infrastructure, defense communications, land mobile radio, avionics, ISM applications, and VHF/UHF/L/S-band radar.
The MAGX-100027-100C0P supports linear, CW, and pulsed operation with output power levels up to 100 W (50 dBm). At 50 V CW operation, the device provides 18.3 dB gain at 2.45 GHz, and 70% drain efficiency. For pulsed operation, the MAGX-100027-100C0P offers 18.4 dB gain at 2.7 GHz and 71% drain efficiency. This 100% RF-tested transistor comes in a standard plastic package with bolt down flange. Delivering performance that rivals expensive GaN on Silicon Carbide (GaN on SiC). MACOM says it has a projected volume production cost structure below incumbent LDMOS technology.
MACOM also boasts that its Gen4 GaN transistor provides over 70% peak efficiency and 19 dB gain for modulated signals at 2.7 GHz. This performance is similar to GaN on SiC technologies, and more than 10 higher efficiency than LDMOS. It also provides power density that is more than four times that of LDMOS.
Gary Lopes, product manager at MACOM commented, “Gen4 GaN products extend the innovation and commercialization trajectories of earlier generations of GaN on Si, which have demonstrated clear, field-proven reliability in harsh environmental conditions for more than five years.”