Macom Technology of Lowell, Massachusetts USA, has introduced a new 500 W GaN-on-Si power transistor for L-Band Airport Surveillance Radar (ASR) applications at 1.2 to 1.4 GHz.
According to the company, the device can provide industry-leading efficiency at peak pulse power levels up to 500 W. Furthermore, the company says that the new MAGX-101214-500 is expected to outperform premium-priced GaN-on-SiC-based transistors. Additionally, the company contends that the power transistor will far exceed the performance, efficiency and power density of legacy LDMOS-based devices.
Macom says that the new MAGX-101214-500 lets customers scale to higher power levels across a host of ASR applications. The device can provide 500 W output power at above 70% power efficiency at 50V operation under pulsed conditions. In a small-footprint ceramic flanged package, the device supports matching structures that minimize circuit size, and the company says that the MAGX-101214-500 transistors help enable rugged, compact radar systems using efficient and simplified cooling and power supply designs.
“The continued expansion of MACOM’s GaN-on-Si product portfolio enables customers to address an ever-widening range of RF power requirements while achieving performance profiles that meet and exceed GaN-on-SiC, at significantly less cost at scaled volume production levels,” said Greg French, Senior Product Manager, RF Power, at Macom.
The company is now offering samples of the new 500 W transistors. Macom is showcasing the MAGX-101214-500 at European Microwave Week (EuMW), October 10-12, Nuremberg, Germany, at the company’s booth #200.