M/A-COM Technology Solutions Inc. based in Lowell, Massachusetts USA, introduced a new GaN-on-SiC HEMT Power Transistor for L-Band pulsed radar applications.The MAGX-001214-650L00 is a gold-metalized pre-matched GaN-on-silicon carbide transistor that the company claims to have the highest peak power available for a single-ended power transistor optimized for pulsed L-Band radar applications. The MAGX-001214-650L00 guarantees 650 W of peak power with 60% efficiency and a typical 19.5 dB of gain.
The device also boasts high breakdown voltages for stable and reliable operation at 50 V under more extreme load mismatch conditions. The HEMT Power transistor, which has undergone MACOM’s rigorous qualification and reliability testing, is assembled in a high-performance ceramic flange package. According to M/A-COM, the device is ideally suited to demanding radar applications. The robust MAGX-001214-650L00 operates between the 1200 MHz – 1400 MHz frequency range and has a mean time to failure (MTTF) of 5.3*106 hours.
“The MAGX-001214-650L00 is a clear leader in high pulsed power GaN technology with guaranteed 650 W of peak output power combined with excellent gain, efficiency and reliable performance,” said Paul Beasly, product manager. “The device is an ideal candidate for customers looking to combine two power transistors and realize over 1,000 W of peak power in a single pallet for next generation L-Band radar systems that require increased performance in smaller footprints.”