M/A-COM Technology Solutions Announces New 500 W Power Transistor

M/A-COM Technology Solutions Inc. of Lowell, Massachusetts USA, has
introduced a new GaN on SiC HEMT Power Transistor for L-Band pulsed radar
applications. The MAGX-001214-500L00 is a gold-metalized pre-matched GaN on
silicon carbide transistor optimized for pulsed L-Band radar applications. The
MAGX-001214-500L00 provides 500 W of output power with 19 dB of gain and 55%
efficiency. The device, which operates at 55% efficiency, boasts what the
company says are very high breakdown voltages. According to M/A-Com these high
breakdown voltages allow for operation at 50 V under more extreme load mismatch
conditions.

“The transistor is a clear leader in high pulsed power GaN
technology with 500 W of output power combined with excellent gain, efficiency
and rugged performance,”
said Paul Beasly, Product Manager.
“The device is an ideal candidate for customers looking to upgrade
L-Band radar systems to the next level of pulsed power performance and
experience the solid reliability that is offered by M/A-COM Tech GaN Power
Solutions.”

MAGX-001214-500L00 operates between the 1200 MHz – 1400 MHz frequency
range and has a mean time to failure (MTTF) of 5.3*10^6 hours. It is available
as both flanged and flangeless packaged devices.